The effects of substrate temperature on ZnO-based resistive random access memory devices

被引：15
|
作者：
Zhao Jian-Wei [1 ]
Liu Feng-Juan [1 ]
Huang Hai-Qin [1 ]
Hu Zuo-Fu [1 ]
Zhang Xi-Qing [1 ]
机构：
[1] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Minist Educ, Inst Optoelect Technol, Beijing 100044, Peoples R China
来源：
CHINESE PHYSICS B | 2012年 / 21卷 / 06期
基金：
中国国家自然科学基金;
关键词：
ZnO; resistive switching devices; magnetron sputtering; SWITCHING MEMORIES;
D O I：
10.1088/1674-1056/21/6/065201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 degrees C substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 10(4)-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low: 0.3 V/-0.7 V (OFF state) and 0.3 V (ON state). A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.
引用
收藏
页数：4
相关论文
共 50 条
  • [11] ZnO-based resistive memory with self-rectifying behavior for neuromorphic devices
    Na, Hyesung
    So, Hyojin
    Jang, Heesung
    Park, Jihee
    Kim, Sungjun
    APPLIED SURFACE SCIENCE, 2024, 671
  • [12] An overview of resistive random access memory devices
    LI YingTao 1
    2 Laboratory of Nano-Fabrication and Novel Device Integration
    Science Bulletin, 2011, (Z2) : 3072 - 3078
  • [13] An overview of resistive random access memory devices
    Li YingTao
    Long ShiBing
    Liu Qi
    Lu HangBing
    Liu Su
    Liu Ming
    CHINESE SCIENCE BULLETIN, 2011, 56 (28-29): : 3072 - 3078
  • [14] Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-based Transparent Resistive Memory Devices
    Simanjuntak, F. M.
    Pattanayak, B.
    Lin, C-C
    Tseng, T-S
    PROCESSES AT THE SEMICONDUCTOR SOLUTION INTERFACE 7, 2017, 77 (04): : 155 - 160
  • [15] First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory
    Zhao Jing
    Dong Jing-Yu
    Ren Shu-Xia
    Zhang Li-Yong
    Zhao Xu
    Chen Wei
    CHINESE PHYSICS B, 2014, 23 (12)
  • [16] First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory
    赵晶
    董静雨
    任书霞
    张礼勇
    赵旭
    陈伟
    Chinese Physics B, 2014, 23 (12) : 416 - 421
  • [17] Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices
    Zhao, Jianwei
    Liu, Fengjuan
    Sun, Jian
    Huang, Haiqin
    Hu, Zuofu
    Zhang, Xiqing
    CHINESE OPTICS LETTERS, 2012, 10 (01)
  • [18] Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices
    赵建伟
    刘凤娟
    孙建
    黄海琴
    胡佐富
    张希清
    ChineseOpticsLetters, 2012, 10 (01) : 78 - 81
  • [19] Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices
    Dongale, T. D.
    Khot, K. V.
    Mohite, S. V.
    Khandagale, S. S.
    Shinde, S. S.
    Patil, V. L.
    Vanalkar, S. A.
    Moholkar, A. V.
    Rajpure, K. Y.
    Bhosale, P. N.
    Patil, P. S.
    Gaikwad, P. K.
    Kamat, R. K.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2016, 8 (04)
  • [20] Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique
    Wu, Chi-Chang
    You, Hsin-Chiang
    Lin, Yu-Hsien
    Yang, Chia-Jung
    Hsiao, Yu-Ping
    Liao, Tun-Po
    Yang, Wen-Luh
    MATERIALS, 2018, 11 (02):
12345