Backside interferometric methods for localization of ESD-induced leakage current and metal shorts

被引：3

作者：

Dubec, V.

Bychikhin, S.

Pogany, D.

Gornik, E.

Brodbeck, T.

Stadler, W.

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[2] Infineon Technol, COM BTS LIB IO, D-81726 Munich, Germany

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2007.07.029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transient interferometric mapping (TIM) setup for ns-time ESD testing is adapted for post-stress failure analysis. Probing from the chip backside using the thermo-optical effect is used for localization of heating place related to failure. Two variants of 2D holographic interferometers, a Michelson and a "Wollaston" one, are used for a rough identification of a failure site. An adapted scanning heterodyne interferometer is used for accurate position determination with a 2 mu m space resolution. The methods are applied to identify ESD damage and metal shorts. Sensitivity and space resolution are analyzed, supported by a 3D-thermal simulation of repetitive heating signal. A power sensitivity of 50 mu W for a single point heat source is demonstrated. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1539 / 1544

页数：6

共 47 条

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