Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step

被引：10
|
作者：
Kim, TG [1 ]
Son, CS [1 ]
Ogura, M [1 ]
机构：
[1] Japan Sci & Technol Corp, Electrotech Lab, CREST, Tsukuba, Ibaraki 3058568, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 05期
关键词：
distributed feedback (DFB) lasers; gain-coupling; MOCVD; quantum-wires; semiconductor lasers;
D O I：
10.1109/68.920733
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-mum pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about I-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices.
引用
收藏
页码：409 / 411
页数：3
相关论文
共 50 条
  • [41] PHOTOLUMINESCENCE FROM AlGaAs-GaAs SINGLE QUANTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR BEAM EPITAXY.
    Fukunaga, Toshiaki
    Kobayashi, Keisuke L.I.
    Nakashima, Hisao
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (07): : 510 - 512
  • [42] Gain-Coupled High-Power Low-RIN 1.55 μm Single-Mode DFB Lasers With Wide Ridge Waveguide
    He, Mukun
    Gan, Lin
    Li, Hongtao
    Wang, Jian
    Han, Yanjun
    Sun, Changzheng
    Xiong, Bing
    Hao, Zhibiao
    Wang, Lai
    Luo, Yi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2024, 36 (10) : 653 - 656
  • [43] HIGH-SPEED PERFORMANCE OF PARTLY GAIN-COUPLED 1.55-MU-M STRAINED-LAYER MULTIPLE-QUANTUM-WELL DFB LASERS
    LU, H
    LI, GP
    MAKINO, T
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (08) : 861 - 863
  • [44] MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine
    Dong, JR
    Teng, JH
    Chua, SJ
    Foo, BC
    Wang, YJ
    Yin, R
    JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) : 59 - 62
  • [45] THE FABRICATION OF QUANTUM-WIRE STRUCTURES THROUGH APPLICATION OF CCL4 TOWARDS LATERAL GROWTH-RATE CONTROL OF GAAS ON PATTERNED GAAS SUBSTRATES
    KIM, Y
    PARK, YK
    KIM, MS
    KANG, JM
    KIM, SI
    HWANG, SM
    MIN, SK
    APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1871 - 1873
  • [46] PHOTOLUMINESCENCE FROM AlGaAs-GaAs SINGLE QUANTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN ON GaAs (100) AND (311) SUBSTRATES AT VARIOUS GROWTH TEMPERATURES BY MOLECULAR BEAM EPITAXY.
    Fukunaga, Toshiaki
    Nakashima, Hisao
    Japanese Journal of Applied Physics, Part 2: Letters, 1986, 25 (10): : 856 - 858
  • [47] HIGH-POWER ALGAAS-GAAS SINGLE QUANTUM-WELL SURFACE-EMITTING LASERS WITH INTEGRATED 45-DEGREES BEAM DEFLECTORS
    KIM, JH
    LANG, RJ
    LARSSON, A
    LEE, LP
    NARAYANAN, AA
    APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2048 - 2050
  • [48] REDUCTION OF WELL WIDTH FLUCTUATION IN ALGAAS-GAAS SINGLE QUANTUM-WELL BY GROWTH INTERRUPTION DURING MOLECULAR-BEAM EPITAXY
    FUKUNAGA, T
    KOBAYASHI, KLI
    NAKASHIMA, H
    SURFACE SCIENCE, 1986, 174 (1-3) : 71 - 75
  • [49] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUANTUM-WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN ON GAAS(100) AND GAAS(311) SUBSTRATES AT VARIOUS GROWTH TEMPERATURES BY MOLECULAR-BEAM EPITAXY
    FUKUNAGA, T
    NAKASHIMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10): : L856 - L858
  • [50] RELIABLE LOW THRESHOLD GAAS/ALGAAS BH QUANTUM-WELL LASERS FABRICATED BY SINGLE STEP AP-MOVPE
    AMBROSIUS, HPMM
    BOERRIGTERLAMMERS, HJM
    HAGEN, SH
    TIJBURG, RP
    VANTBLIK, HFJ
    FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A211 - A214
12345