Fabrication of AlGaAs-GaAs quantum-wire gain-coupled DFB lasers by a single MOCVD growth step

被引：10

作者：

Kim, TG ^{[1
]}

Son, CS ^{[1
]}

Ogura, M ^{[1
]}

机构：

[1] Japan Sci & Technol Corp, Electrotech Lab, CREST, Tsukuba, Ibaraki 3058568, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 05期

关键词：

distributed feedback (DFB) lasers; gain-coupling; MOCVD; quantum-wires; semiconductor lasers;

D O I：

10.1109/68.920733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs-GaAs quantum-wire (QWR) gain-coupled distributed-feedback (GC-DFB) lasers have been fabricated by a single metal-organic chemical vapor deposition growth step on 0.36-mum pitch V-groove arrays of GaAs. A record low-threshold current of 13 mA is achieved via DFB lasing from QWR gain at room temperature. The consistency of the photon energies of the lasing and the photoluminescence peaks from QWR, and about I-nm-wide stopband with a large threshold gain difference observed in the near-threshold spectrum are presented as possible evidence for GC-DFB effects in these devices.

引用

页码：409 / 411

页数：3

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