Self-Aligned Double and Quadruple Patterning Layout Principle

被引:22
|
作者
Nakayama, Koichi [1 ]
Kodama, Chikaaki [1 ]
Kotani, Toshiya [1 ]
Nojima, Shigeki [2 ]
Mimotogi, Shoji [2 ]
Miyamoto, Shinji [1 ]
机构
[1] Toshiba Co Ltd, Sakae Ku, 2-5-1 Kasama, Yokohama, Kanagawa 2478585, Japan
[2] Toshiba Corp R&D Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
关键词
Double patterning; Self-aligned double patterning; SADP; Self-aligned quadruple patterning; SAQP; DECOMPOSITION;
D O I
10.1117/12.916678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Self-Aligned Double Patterning (SADP) has become one of the most promising processes for 20nm node technology and beyond. Despite its robustness against overlay, it is a challenging process for designers since predicting the wafer image instantly is almost impossible. Self-Aligned Quadruple Patterning (SAQP) is also critical technology for sub-10nm process but more complex than SADP, so it is too difficult to design a layout intuitively. Needless to say designing layout by applying N times sidewalls intuitively is impossible for almost everyone. In this paper, we clarify a new intuitive principle for SADP layout. The principle uses "Base patterns" painted in different two colors interchangeably. The proposed method enables us to design SADP layout simply by connecting and cutting fundamental pattern arbitrarily with a few restrictions. Another benefit is that either of two colors in the pattern can be used as mandrel. We can apply the principle to not only SAQP but also N times sidewall processes. Considering these advantages, layout formed by sidewall process becomes designer-friendly.
引用
收藏
页数:9
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