Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs

被引：40
|
作者：
Makovejev, S. [1 ]
Raskin, J-P [2 ]
Arshad, M. K. Md [2 ,3 ]
Flandre, D. [2 ]
Olsen, S. [1 ]
Andrieu, F. [4 ]
Kilchytska, V. [2 ]
机构：
[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain, Belgium
[3] Univ Malaysia Perlis, Sch Microelect Engn, Kangar, Malaysia
[4] CEA Leti, F-38054 Grenoble 9, France
来源：
SOLID-STATE ELECTRONICS | 2012年 / 71卷
关键词：
Ultra-thin body FD SOI MOSFETs; Ultra-thin BOX; Output conductance; Self-heating effect; Frequency response; Substrate coupling;
D O I：
10.1016/j.sse.2011.10.027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The frequency variation of the output conductance in ultra-thin body with ultra-thin BOX (UTBB) SOI MOSFETs without a ground plane is studied through measurements and two-dimensional simulations. Two effects causing the output conductance variation with frequency, namely self-heating and source-to-drain coupling through the substrate, are discussed and qualitatively compared. Notwithstanding the use of ultra-thin BOX, which allows for improved heat evacuation from the channel to the Si substrate underneath BOX, a self-heating-related transition clearly appears in the output conductance frequency response. Furthermore, the use of an ultrathin BOX results in an increase of the substrate-related output conductance variation in frequency. As a result, the change in output conductance of UTBB MOSFETs caused by the substrate effect appears to be comparable and even stronger than the change due to self-heating. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：93 / 100
页数：8
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