Extraction of isothermal characteristics from small-signal measurements using a thermal derivative model for self-heating in SOI MOSFETs

One of the most difficult tasks encountered in self-heating is that of accurately extracting the isothermal characteristics from practical measurements. Measured DC characteristics have been used for bulk MOSFET modeling, but are inappropriate for SOI MOSFETs with self-heating effects. Our work proposes a new technique which includes measured thermal derivatives in the analysis. When the thermal derivatives are used, isothermal response can be extracted with fewer assumptions and the results are more accurate.