Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs

被引：40

作者：

Makovejev, S. ^{[1
]}

Raskin, J-P ^{[2
]}

Arshad, M. K. Md ^{[2
,3
]}

Flandre, D. ^{[2
]}

Olsen, S. ^{[1
]}

Andrieu, F. ^{[4
]}

Kilchytska, V. ^{[2
]}

机构：

[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain, Belgium

[3] Univ Malaysia Perlis, Sch Microelect Engn, Kangar, Malaysia

[4] CEA Leti, F-38054 Grenoble 9, France

来源：

SOLID-STATE ELECTRONICS | 2012年 / 71卷

关键词：

Ultra-thin body FD SOI MOSFETs; Ultra-thin BOX; Output conductance; Self-heating effect; Frequency response; Substrate coupling;

D O I：

10.1016/j.sse.2011.10.027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The frequency variation of the output conductance in ultra-thin body with ultra-thin BOX (UTBB) SOI MOSFETs without a ground plane is studied through measurements and two-dimensional simulations. Two effects causing the output conductance variation with frequency, namely self-heating and source-to-drain coupling through the substrate, are discussed and qualitatively compared. Notwithstanding the use of ultra-thin BOX, which allows for improved heat evacuation from the channel to the Si substrate underneath BOX, a self-heating-related transition clearly appears in the output conductance frequency response. Furthermore, the use of an ultrathin BOX results in an increase of the substrate-related output conductance variation in frequency. As a result, the change in output conductance of UTBB MOSFETs caused by the substrate effect appears to be comparable and even stronger than the change due to self-heating. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：93 / 100

页数：8

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