Two-dimensional photonic crystals with Ge/Si self-assembled islands

被引:44
|
作者
David, S [1 ]
El kurdi, M [1 ]
Boucaud, P [1 ]
Chelnokov, A [1 ]
Le Thanh, V [1 ]
Bouchier, D [1 ]
Lourtioz, JM [1 ]
机构
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
关键词
QUANTUM DOTS; EXTRACTION; EMISSION;
D O I
10.1063/1.1612892
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional photonic crystals were fabricated on silicon-on-insulator waveguides with self-assembled Ge/Si islands deposited on top of the upper silicon layer. The photonic crystals consist of triangular lattices of air holes designed to exhibit a forbidden band around 1.5 mum. Different hexagonal photonic crystals microcavities were processed whose optical properties are probed at room temperature with the Ge/Si island photoluminescence. Quality factors larger than 200 are measured for hexagonal H3 cavities. A significant enhancement of the Ge/Si island photoluminescence is achieved in the 1.3-1.55 mum spectral region using the photonic crystal microcavities. We show that the energy resonance of the defect modes can be tuned with the filling factor of the photonic crystal. (C) 2003 American Institute of Physics.
引用
收藏
页码:2509 / 2511
页数:3
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