Two-dimensional photonic crystals with Ge/Si self-assembled islands

被引:44
|
作者
David, S [1 ]
El kurdi, M [1 ]
Boucaud, P [1 ]
Chelnokov, A [1 ]
Le Thanh, V [1 ]
Bouchier, D [1 ]
Lourtioz, JM [1 ]
机构
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
关键词
QUANTUM DOTS; EXTRACTION; EMISSION;
D O I
10.1063/1.1612892
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional photonic crystals were fabricated on silicon-on-insulator waveguides with self-assembled Ge/Si islands deposited on top of the upper silicon layer. The photonic crystals consist of triangular lattices of air holes designed to exhibit a forbidden band around 1.5 mum. Different hexagonal photonic crystals microcavities were processed whose optical properties are probed at room temperature with the Ge/Si island photoluminescence. Quality factors larger than 200 are measured for hexagonal H3 cavities. A significant enhancement of the Ge/Si island photoluminescence is achieved in the 1.3-1.55 mum spectral region using the photonic crystal microcavities. We show that the energy resonance of the defect modes can be tuned with the filling factor of the photonic crystal. (C) 2003 American Institute of Physics.
引用
收藏
页码:2509 / 2511
页数:3
相关论文
共 50 条
  • [21] Self-aligning of self-assembled Ge islands on Si(001)
    Kamins, TI
    Williams, RS
    Basile, DP
    NANOTECHNOLOGY, 1999, 10 (02) : 117 - 121
  • [22] Shape transitions of self-assembled Ge islands on Si (001)
    Rastelli, A
    Kummer, M
    von Känel, H
    SELF-ASSEMBLY PROCESSES IN MATERIALS, 2002, 707 : 161 - 166
  • [23] Lithographic positioning of self-assembled Ge islands on Si(001)
    Kamins, TI
    Williams, RS
    APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1201 - 1203
  • [24] Shape transitions of self-assembled Ge islands on Si(001)
    Rastelli, A
    Kummer, M
    von Känel, H
    CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY, 2002, 696 : 151 - 156
  • [25] SOI-based photonic crystals investigated by Ge/Si self-assembled island luminescence
    Li, X
    Checoury, X
    El Kurdi, M
    David, S
    Boucaud, P
    Kermarrec, O
    Campidelli, Y
    Bensahel, D
    2005 2ND IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2005, : 36 - 38
  • [26] Two-dimensional nematic colloidal crystals self-assembled by topological defects
    Musevic, Igor
    Skarabot, Miha
    Tkalec, Uros
    Ravnik, Miha
    Zumer, Slobodan
    SCIENCE, 2006, 313 (5789) : 954 - 958
  • [27] Growth and characterization of self-assembled Ge-rich islands on Si
    Techn. Univ Munchen, Garching, Germany
    Semicond Sci Technol, 11 S (1521-1528):
  • [28] Evolution of the intermixing process in Ge/Si(111) self-assembled islands
    Motta, N
    Rosei, F
    Sgarlata, A
    Capellini, G
    Mobilio, S
    Boscherini, F
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (2-3): : 264 - 268
  • [29] Light emission from Ge/Si self-assembled islands in microcavities
    Boucaud, P
    Li, X
    El Kurdi, M
    David, S
    Checoury, X
    Lourtioz, JM
    Kermarrec, O
    Campidelli, Y
    Bensahel, D
    2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2004, : 133 - 135
  • [30] Trench formation around and between self-assembled Ge islands on Si
    Denker, U
    Schmidt, OG
    Jin-Philipp, NY
    Eberl, K
    APPLIED PHYSICS LETTERS, 2001, 78 (23) : 3723 - 3725