Electrical and photoelectric properties of electrodeposited n-Si/n-Cd1-xZnxS heterojunctions

被引：1
|
作者：
Mamedov, GM
Gasanov, GA
Amirova, SI
机构：
[1] Rasul Zade State Univ, Baku 370148, Azerbaijan
[2] Mamedaliev State Univ, Naxcivan 373630, Azerbaijan
来源：
INORGANIC MATERIALS | 2005年 / 41卷 / 03期
关键词：
D O I：
10.1007/s10789-005-0111-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
n-Si/n-Cd1-xZnxS heterojunctions are produced by electrodepositing Cd1-xZnxS (0 <= x <= 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350 degrees C for 7 min: V-OC = 0.5 V and I-SC = 3.8 mA/cm(2) under illumination of 1500 1x at 300 K.
引用
收藏
页码：220 / 223
页数：4
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