Electrical and photoelectric properties of electrodeposited n-Si/n-Cd1-xZnxS heterojunctions

被引：1
|
作者：
Mamedov, GM
Gasanov, GA
Amirova, SI
机构：
[1] Rasul Zade State Univ, Baku 370148, Azerbaijan
[2] Mamedaliev State Univ, Naxcivan 373630, Azerbaijan
来源：
INORGANIC MATERIALS | 2005年 / 41卷 / 03期
关键词：
D O I：
10.1007/s10789-005-0111-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
n-Si/n-Cd1-xZnxS heterojunctions are produced by electrodepositing Cd1-xZnxS (0 <= x <= 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350 degrees C for 7 min: V-OC = 0.5 V and I-SC = 3.8 mA/cm(2) under illumination of 1500 1x at 300 K.
引用
收藏
页码：220 / 223
页数：4
相关论文
共 50 条
  • [21] Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure
    Ertürk, K
    Bektöre, Y
    Haciismailoglu, MC
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4, 2005, 2 (04): : 1428 - 1432
  • [22] ELECTRICAL AND OPTICAL PROPERTIES OF GE-SI N-N HETEROJUNCTIONS
    KIMURA, T
    NUNOSHITA, M
    YAMAGUCHI, J
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (07) : 639 - +
  • [23] Electrical characteristics of a triode with an n-Si/Mo-Au double thin film n-Si (n-Si/Mo-Au/n-Si) structure
    Gekka, Y
    Satoh, K
    Nagami, K
    Harayama, A
    APPLIED SURFACE SCIENCE, 1997, 113 : 718 - 721
  • [24] Electrical properties and carrier transport mechanisms of n-ZnO/SiOx/n-Si isotype heterojunctions with native or thermal oxide interlayers
    Song, Dengyuan
    Guo, Baozeng
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (02)
  • [25] The investigation of the electrical properties of Fe3O4/n-Si heterojunctions in a wide temperature range
    Deniz, Ali Riza
    Caldiran, Zakir
    Metin, Onder
    Meral, Kadem
    Aydogan, Sakir
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2016, 473 : 172 - 181
  • [26] ELECTROOPTICAL PROPERTIES OF CD1-XZNXS FILMS AND FABRICATION OF CD1-XZNXS/INP HETEROJUNCTIONS
    PAL, AK
    DHAR, A
    MONDAL, A
    BASAK, RL
    CHAUDHURI, S
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 1646 - 1649
  • [27] Comparative study of the electrical properties of Au/n-Si(MS) and Au/Si3N4 /n-Si(MIS) Schottky diodes
    Adem Tataroglu
    Chinese Physics B, 2013, (06) : 631 - 636
  • [28] ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF CD1-XZNXS-P-GAAS HETEROJUNCTIONS
    FRANZOSI, P
    GHEZZI, C
    GOMBIA, E
    APPLIED PHYSICS, 1980, 21 (01): : 83 - 90
  • [29] Electrical and photoelectric properties of n-CdO-p-InSe anisotype heterojunctions
    Katerynchuk, V. N.
    Kudrynskyi, Z. R.
    Khomyak, V. V.
    Orletsky, I. G.
    Netyaga, V. V.
    SEMICONDUCTORS, 2013, 47 (07) : 943 - 946
  • [30] Investigating the optoelectronic properties of NiOEP/n-Si heterojunctions for solar cell applications
    Alghamdi, Nawal
    Darwish, A. A. A.
    Hamdalla, Taymour A.
    PHYSICA SCRIPTA, 2023, 98 (10)
12345