Structural control of silicon oxide particles by oxygen partial pressure in RF plasma

被引：3
|
作者：
Sato, T [1 ]
Takeda, A
Kimura, Y
Suzuki, H
Saito, Y
Kaito, C
机构：
[1] Ritsumeikan Univ, Dept Nanophys Frontier Project, Shiga 525857, Japan
[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9A期
关键词：
silicon oxide particle; Si(C2H5O)(4); RF plasma; oxygen partial pressure; high-resolution transmission electron microscopy; infrared spectroscopy;
D O I：
10.1143/JJAP.42.5896
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous silicon oxide particles with the size of 30-100 nm were produced by spraying Si(C2H5O)(4) liquid into a plasma region. Plasma was generated at a high pressure of 10 Torr in a mixture gas of argon and oxygen. The production of two silicon oxide particles with the structure of SiO and SiO2 could be controlled by the oxygen partial pressure in plasma.
引用
收藏
页码：5896 / 5897
页数：2
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