Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

被引：5
|
作者：
Jung, Myung-Ho [1 ]
Handa, Hiroyuki [1 ]
Takahashi, Ryota [1 ]
Fukidome, Hirokazu [1 ]
Suemitsu, Tetsuya [1 ,2 ]
Otsuji, Taiichi [1 ,2 ]
Suemitsu, Maki [1 ,2 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1070075, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 07期
基金：
日本学术振兴会;
关键词：
THIN-FILM TRANSISTORS; GRAPHITE;
D O I：
10.1143/JJAP.50.070107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial-graphene field-effect transistor (EG-FET) with a polymer gate dielectric was fabricated and their electrical characteristics were investigated. The epitaxial graphene layer was formed on a semi-insulating 6H-SiC substrate by a high-temperature annealing in ultrahigh vacuum. The formation of graphene was confirmed by low-energy electron diffraction (LEED), Raman-scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The polymer gate dielectric (ZEP520a) layer was formed by spin coating, which exhibits good dielectric properties without noticeable structural degradation of the graphene layer. The EG-FETs with this polymer gate dielectric shows an n-type characteristic, with the field-effect mobility of 580 cm(2) V-1 s(-1). (C) 2011 The Japan Society of Applied Physics
引用
收藏
页数：5
相关论文
共 50 条
  • [31] Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor
    Singh, Pushpapraj
    Park, Woo-Tae
    Miao, Jianmin
    Shao, Lichun
    Kotlanka, Rama Krishna
    Kwong, Dim-Lee
    APPLIED PHYSICS LETTERS, 2012, 100 (06)
  • [32] Engineering gate dielectric surface properties for enhanced polymer field-effect transistor performance
    Lei, Yanlian
    Wu, Bo
    Chan, Wing-Kin Edward
    Zhu, Furong
    Ong, Beng S.
    JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (47) : 12267 - 12272
  • [33] The memory effect of a pentacene field effect transistor with a polarizable gate dielectric
    Unni, KNN
    de Bettignies, R
    Dabos-Seignon, S
    Nunzi, JM
    ORGANIC PHOTONIC MATERIALS AND DEVICES VI, 2004, 5351 : 166 - +
  • [34] Liquid gate dielectric field effect transistor for a radiation nose
    Han, Jin-Woo
    Meyyappan, M.
    Ahn, Jae-Hyuk
    Choi, Yang-Kyu
    SENSORS AND ACTUATORS A-PHYSICAL, 2012, 182 : 1 - 5
  • [35] Field effect transistor with thin AlOxNy film as gate dielectric
    Firek, Piotr
    Szarafinski, Jakub
    Gluszko, Grzegorz
    Szmidt, Jan
    MICROELECTRONICS INTERNATIONAL, 2020, 37 (02) : 103 - 107
  • [36] Field-effect-transistor based biosensors: a review of their use in environmental monitoring applications
    Elli, Giulia
    Ciocca, Manuela
    Lugli, Paolo
    Petti, Luisa
    2021 IEEE INTERNATIONAL WORKSHOP ON METROLOGY FOR AGRICULTURE AND FORESTRY (IEEE METROAGRIFOR 2021), 2021, : 102 - 107
  • [37] Cryogenic characterization of a ferroelectric field-effect-transistor
    Wang, Zheng
    Ying, Hanbin
    Chern, Winston
    Yu, Shimeng
    Mourigal, Martin
    Cressler, John D.
    Khan, Asif I.
    APPLIED PHYSICS LETTERS, 2020, 116 (04)
  • [38] Investigation of a DNA Nucleobase as a Gate Dielectric for Potential Application in a Graphene-based Field Effect Transistor
    Williams, Adrienne D.
    Ouchen, Fahima
    Kim, Steve
    Ngo, Yen H.
    Elhamri, Said
    Mou, Shin
    Kozlowski, Gregory
    Naik, Rajesh R.
    Grote, James
    NANOBIOSYSTEMS: PROCESSING, CHARACTERIZATION, AND APPLICATIONS VII, 2014, 9171
  • [39] Novel Graphene Field Effect Transistor with BNTM Ferroelectric Gate
    Wang, Feng
    Zhang, Wanli
    Wang, Xudong
    Yan, Shaoan
    Zhong, Xinghong
    Tang, Minghua
    7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
  • [40] A Dual-gate Ambipolar Graphene Field Effect Transistor
    Pan, Wang
    Li, Yang
    Deng, Wuzhu
    Chen, Yangyang
    Zhou, Wenli
    2014 9TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS), 2014, : 247 - 250
12345