Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications

被引：5

作者：

Jung, Myung-Ho ^{[1
]}

Handa, Hiroyuki ^{[1
]}

Takahashi, Ryota ^{[1
]}

Fukidome, Hirokazu ^{[1
]}

Suemitsu, Tetsuya ^{[1
,2
]}

Otsuji, Taiichi ^{[1
,2
]}

Suemitsu, Maki ^{[1
,2
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1070075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 07期

基金：

日本学术振兴会;

关键词：

THIN-FILM TRANSISTORS; GRAPHITE;

D O I：

10.1143/JJAP.50.070107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial-graphene field-effect transistor (EG-FET) with a polymer gate dielectric was fabricated and their electrical characteristics were investigated. The epitaxial graphene layer was formed on a semi-insulating 6H-SiC substrate by a high-temperature annealing in ultrahigh vacuum. The formation of graphene was confirmed by low-energy electron diffraction (LEED), Raman-scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The polymer gate dielectric (ZEP520a) layer was formed by spin coating, which exhibits good dielectric properties without noticeable structural degradation of the graphene layer. The EG-FETs with this polymer gate dielectric shows an n-type characteristic, with the field-effect mobility of 580 cm(2) V-1 s(-1). (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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