XPS Study of Thermally Evaporated Ge-Sb-Te Amorphous Thin Films

被引：1
|
作者：
Kumar, Sandeep [1 ]
Singh, Digvijay [1 ]
Thangaraj, R. [1 ]
机构：
[1] Guru Nanak Dev Univ, Semicond Lab, Dept Phys, Amritsar 143005, Punjab, India
来源：
INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011) | 2011年 / 1393卷
关键词：
chalcogenide; thin film; x-ray photoelectron spectroscopy; PHASE-CHANGE; GE2SB2TE5; SILVER;
D O I：
10.1063/1.3653649
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Amorphous thin films were prepared from the bulk composition of Ge(22)Sb(22)Te(56) (GST) alloy by thermal evaporation in good vacuum condition. The amorphous nature of as-deposited films was checked with x-ray diffraction (XRD) studies. X-ray photoelectron spectroscopy (XPS) has been used to determine the binding energies of the core electrons in amorphous thin GST films. In XPS, we performed the survey scan from the binding energy (BE) range from 0-1100 eV and core level spectra of Ge 3d, Sb 3d and Te 3d.
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