Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells

被引：0
|
作者：
Ji Zi-Wu [1 ]
Zheng Yu-Jun [1 ]
Xu Xian-Gang [2 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
CHINESE PHYSICS B | 2010年 / 19卷 / 11期
基金：
中国国家自然科学基金;
关键词：
type-II quantum wells; cyclotron resonance; photoluminescence; electron tunneling; INFRARED MAGNETOSPECTROSCOPY; NONEQUIVALENT INTERFACES; MAGNETIC-FIELDS; PHOTOLUMINESCENCE; HETEROSTRUCTURES; SUPERLATTICES; EQUIVALENT; EXCITONS; KINETICS; MOBILITY;
D O I：
10.1088/1674-1056/19/11/117303
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied the cyclotron-resonance absorption and photoluminescence properties of the modulation n-doped ZnSe/BeTe/ZnSe type-II quantum wells It is shown that only the doped sample shows electron cyclotron-resonance absorption Also, the undoped sample shows two distinctive peaks in the spatially indirect photoluminescence spectra, and the doped one shows only one peak The results reveal that the high concentration electrons accumulated in ZnSe quantum well layers from n-doped layers can tunnel through BeTe barrier from one well layer to the other The electron concentration difference between these two well layers originating from the tunneling results in a new additional electric field, and can cancel out a built-in electric field as observed in the undoped structures
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页数：4
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