Homogeneous linewidth of the direct exciton in a type-II ZnSe/BeTe quantum well

被引：20
|
作者：
Platonov, AV
Yakovlev, DR [1 ]
Zehnder, U
Kochereshko, VP
Ossau, W
Fischer, F
Litz, T
Waag, A
Landwehr, G
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
基金：
俄罗斯基础研究基金会;
关键词：
beryllium chalcogenides; type-II quantum wells; exciton linewidth;
D O I：
10.1016/S0022-0248(98)80166-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We present an optical study of novel ZnSe/BeTe heterostructures with a type-II band alignment based on beryllium chalcogenides. A. strong exciton transition involving a confined electron and a quasibound hole state (both in the ZnSe layer) is observed in photoluminescence, photoluminescence excitation and reflectivity spectra. This exciton state is drastically broadened by increasing temperature due to enhanced exciton-acoustic phonon interaction. Pronounced features related to the quasibound hole states in the ZnSe layer (upto n = 4) are detected. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：801 / 805
页数：5
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