Composition of nanometer-scaled self-assembled SiGe islands

被引：0
|
作者：
Deng, N [1 ]
Zhang, L [1 ]
Chen, PY [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
self-assembled growth; composition; shape evolution;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantitative relation between composition of sellf-assembled SiGe islands and critical size for shape evolution was established. The critical size, at which Ge islands change from pyramids to domes, increases with increasing of Si concentration in islands. Based on the critical size obtained from AFM characterization of SiGe islands, the composition of nanometer-scaled SiGe islands was calculated from the dependence of critical size of shape transition on the Si concentration.
引用
收藏
页码：910 / 912
页数：3
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