A RF Frequency Tripler with High Output Power in 180nm CMOS

被引:0
|
作者
Zhao, Xinke [1 ]
Xu, Leijun [1 ]
机构
[1] Jiangsu Univ, Sch Elect & Informat Engn, Zhenjiang 212013, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1109/PIERS55526.2022.9793019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a frequency tripler is designed to improve the output power and poor matching of traditional frequency tripler. Balun and passive components are designed for achieve good matching performance while suppressing fundamental wave and even harmonic wave. By using 180nm CMOS technology, the 3-dB bandwidth spans 31.5 GHz similar to 36 GHz, the output power can be achieved to 7.9dBm when injecting RF signal power of 0 dBm, the DC power consumption of the tripler is 36.9mW with the power supply of 1.8 V.
引用
收藏
页码:743 / 747
页数:5
相关论文
共 50 条
  • [31] Low leakage and high performance tag comparator implemented in 180nm CMOS technology
    Koshy, Lidiya Mariam
    Chandran, Jyothish G.
    PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGIES, ICICT 2014, 2015, 46 : 1261 - 1267
  • [32] A Low Power Schmitt Trigger Design using SBT technique in 180nm CMOS Technology
    Suresh, Ambothu
    2014 INTERNATIONAL CONFERENCE ON ADVANCED COMMUNICATION CONTROL AND COMPUTING TECHNOLOGIES (ICACCCT), 2014, : 533 - 536
  • [33] A Low-Power Low-Voltage Dynamic Comparator in 180nm CMOS Technology
    Ghaziani, Niloofar
    Radfar, Sara
    Bastan, Yasin
    Amiri, Parviz
    Maghami, Mohammad Hossein
    2020 28TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2020, : 1139 - 1142
  • [34] A 120V 180nm High Voltage CMOS smart power technology for System-on-chip integration
    Minixhofer, R.
    Feilchenfeld, N.
    Knaipp, M.
    Roehrer, G.
    Park, J. M.
    Zierak, M.
    Enichlmair, H.
    Levy, M.
    Loeffler, B.
    Hershberger, D.
    Unterleitner, F.
    Gautsch, M.
    Chatty, K.
    Shi, Y.
    Posch, W.
    Seebacher, E.
    Schrems, M.
    Dunn, J.
    Harame, D.
    2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2010, : 75 - 78
  • [35] A 12.5GHz RF matrix amplifier in 180nm SOICMOS
    Park, J
    Allstot, DJ
    2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 1, PROCEEDINGS, 2004, : 117 - 120
  • [36] A Design of SPC Transceiver for Automotive Applications in 180nm CMOS Process
    Kumar, Pervesh
    Ali, Imran
    Asif, Muhammad
    Pu, Young Gun
    Lee, Kang-Yoon
    2021 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS-ASIA (ICCE-ASIA), 2021,
  • [37] Quantitative detection system for immunostrips in 180nm standard CMOS technology
    Engincan Tekin
    Caner Celikdemir
    Busra Ucar
    Ozgur Gul
    Baykal Sarioglu
    Analog Integrated Circuits and Signal Processing, 2021, 106 : 493 - 500
  • [38] Design and Implementation of Sample and Hold Circuit in 180nm CMOS Technology
    Prakruthi, T. G.
    Yellampalli, Siva
    2015 INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTING, COMMUNICATIONS AND INFORMATICS (ICACCI), 2015, : 1148 - 1151
  • [39] 220GHz High Gain On-chip Antenna Based on 180nm CMOS
    Yang, Jiaming
    Cui, Dasheng
    Ding, Zhengzhi
    Lv, Xin
    2018 12TH INTERNATIONAL SYMPOSIUM ON ANTENNAS, PROPAGATION AND ELECTROMAGNETIC THEORY (ISAPE), 2018,
  • [40] Cryogenic Calorimetric Signal Readout with 180nm CMOS at 20 mK
    Huang, Roger G.
    Gnani, Dario
    Grace, Carl
    Kolomensky, Yury G.
    Mei, Yuan
    Papadopoulou, Aikaterini
    2022 IEEE 15TH WORKSHOP ON LOW TEMPERATURE ELECTRONICS (WOLTE 2022), 2022,