A RF Frequency Tripler with High Output Power in 180nm CMOS

被引:0
|
作者
Zhao, Xinke [1 ]
Xu, Leijun [1 ]
机构
[1] Jiangsu Univ, Sch Elect & Informat Engn, Zhenjiang 212013, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1109/PIERS55526.2022.9793019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a frequency tripler is designed to improve the output power and poor matching of traditional frequency tripler. Balun and passive components are designed for achieve good matching performance while suppressing fundamental wave and even harmonic wave. By using 180nm CMOS technology, the 3-dB bandwidth spans 31.5 GHz similar to 36 GHz, the output power can be achieved to 7.9dBm when injecting RF signal power of 0 dBm, the DC power consumption of the tripler is 36.9mW with the power supply of 1.8 V.
引用
收藏
页码:743 / 747
页数:5
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