Cathodoluminescence study of low-dimensional quantum structures grown on patterned GaAs(311)A substrates

被引：0

作者：

Jahn, U ^{[1
]}

Nötzel, R ^{[1
]}

Fricke, J ^{[1
]}

Schönherr, HP ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Molecular beam epitaxy on patterned GaAs(311)A substrates exhibits unique growth selectivity allowing the preparation of dense quantum wire arrays and coupled wire-dot structures. The temperature dependence of the cathodoluminescence contrast of a stacked quantum wire array with sub-micron periodicity reveals non-radiative recombination channels and a lateral as well as vertical exciton escape out of the wire regions as loss mechanisms in the range between 5 and 300K. Electronic coupling in wire-dot structures is established by spatially and spectrally resolved cathodoluminescence.

引用

页码：657 / 660

页数：4

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