Cathodoluminescence study of low-dimensional quantum structures grown on patterned GaAs(311)A substrates

被引：0
|
作者：
Jahn, U [1 ]
Nötzel, R [1 ]
Fricke, J [1 ]
Schönherr, HP [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期
关键词：
D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Molecular beam epitaxy on patterned GaAs(311)A substrates exhibits unique growth selectivity allowing the preparation of dense quantum wire arrays and coupled wire-dot structures. The temperature dependence of the cathodoluminescence contrast of a stacked quantum wire array with sub-micron periodicity reveals non-radiative recombination channels and a lateral as well as vertical exciton escape out of the wire regions as loss mechanisms in the range between 5 and 300K. Electronic coupling in wire-dot structures is established by spatially and spectrally resolved cathodoluminescence.
引用
收藏
页码：657 / 660
页数：4
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