Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

被引：1

作者：

Li, HX ^{[1
]}

Wang, ZG ^{[1
]}

Liang, JB ^{[1
]}

Xu, B ^{[1
]}

Jiang, C ^{[1
]}

Gong, Q ^{[1
]}

Liu, FQ ^{[1
]}

Zhou, W ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 12期

基金：

中国国家自然科学基金;

关键词：

quantum wells; semiconductors; electronic band structure; luminescence;

D O I：

10.1016/S0038-1098(98)00139-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：811 / 814

页数：4

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