Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

被引：1
|
作者：
Li, HX [1 ]
Wang, ZG [1 ]
Liang, JB [1 ]
Xu, B [1 ]
Jiang, C [1 ]
Gong, Q [1 ]
Liu, FQ [1 ]
Zhou, W [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 12期
基金：
中国国家自然科学基金;
关键词：
quantum wells; semiconductors; electronic band structure; luminescence;
D O I：
10.1016/S0038-1098(98)00139-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.
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页码：811 / 814
页数：4
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