Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys -: art. no. 121918

被引：31

作者：

Plaza, J ^{[1
]}

Castaño, JL

García, BJ

Carrère, H

Bedel-Pereira, E

机构：

[1] Univ Autonoma Madrid, Dept Fis Aplicada C12, Microelect Lab, E-28049 Madrid, Spain

[2] CNRS, LAAS, F-31077 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 12期

关键词：

D O I：

10.1063/1.1891293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of photoluminescence (PL) and photoreflectance (PR) spectra of GaAs1-xNx unrelaxed layers (0 <= x < 0.05) grown on GaAs (100) substrates is studied and compared. The energy gap deduced from PR measurements and its temperature dependence are in good agreement with predictions of the band anticrossing model. The main PL peak follows a different temperature dependence, being lower in energy than the energy gap obtained by PR. The observed energy difference between PR and PL is much larger than the typical exciton binding energy, increasing with N content. This result agrees with other works, suggesting that low temperature PL recombination in GaAs1-xNx involves electrons trapped in potential fluctuations due to N concentration inhomogeneities. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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