Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

被引：7

作者：

Tang, Jingmin ^{[1
,2
]}

Takeuchi, Soichiro ^{[3
]}

Tanaka, Masaki ^{[3
]}

Tomita, Hiroto ^{[3
]}

Hashimoto, Yusuke ^{[3
]}

Nagata, Takahiro ^{[2
]}

Chen, Jun ^{[2
]}

Ohkochi, Takuo ^{[2
]}

Kotani, Yoshinori ^{[4
]}

Matsushita, Tomohiro ^{[2
,4
]}

Yamashita, Yoshiyuki ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci NIMS, Tsukuba, Ibaraki 3050044, Japan

[2] Nara Inst Sci & Technol NAIST, Ikoma, Nara 6300192, Japan

[3] Kyushu Univ, Fac Engn, Dept Mat Phys & Chem, Fukuoka 8190395, Japan

[4] Japan Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795198, Japan

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2022年 / 4卷 / 10期

关键词：

GaN; Mg-doped GaN; photoelectron hologram; reconstructed; 3D; active and inactive; PHOTOELECTRON; ELECTRON; NITRIDE; HOLOGRAPHY; OPTOELECTRONICS; DEFECTS; LAYERS;

D O I：

10.1021/acsaelm.2c00912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We employed photoelectron spectroscopy (PES) and photoelectron holography (PEH) to clarify the atomic structures and chemical states in the active and inactive dopant states of Mg-doped GaN. Due to the lack of available direct evidence, this has been a controversial issue. From PES, we found that two chemical states existed in the Mg-doped GaN: One is an active dopant state, and the other is an inactive state. We employed PEH to investigate the two observed chemical states, indicating that the active state could be attributed to a Mg atom substituting a Ga atom in the Mg-doped GaN structure (Mg-Ga). The inactive state, on the other hand, was considered to be a disordered structure, an amorphous structure, defects, and/or MgGa bonding with a H atom in that structure.

引用

页码：5087 / 5087

页数：1

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