Development of a PZT MEMS Switch Architecture for Low-Power Digital Applications

被引:39
|
作者
Proie, Robert M., Jr. [1 ,2 ]
Polcawich, Ronald G. [2 ]
Pulskamp, Jeffrey S. [2 ]
Ivanov, Tony [2 ]
Zaghloul, Mona E. [1 ]
机构
[1] George Washington Univ, Dept Elect & Comp Engn, Washington, DC 20052 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
关键词
Actuators; digital circuits; piezoelectric devices; lead zirconate titanate (PZT) ceramics; WAVE-FORM; RF MEMS; THIN; ACTUATION; VOLTAGE; FILMS;
D O I
10.1109/JMEMS.2011.2148160
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A lead zirconate titanate (PZT) microelectromechanical systems (MEMS) digital switch was designed as a low-power low-frequency control system intended to create energy-efficient microcontrollers, control higher voltage systems, and provide integrated control over other MEMS platforms. In addition, the technology is inherently insensitive to high energy radiation and has been shown to operate over a wide range of temperatures. Initial devices were fabricated with three design variables of interest-actuator length, width, and contact metallurgy (Au/Pt, Au/Ru, and Au/Au). To assess the impact of each variable on device performance, device wafers were measured using a SUSS semi-automated probe station and associated control hardware and software. Devices were evaluated based on contact resistance, actuation voltage, minimum actuation voltage using a voltage bias, propagation delay, dynamic power, and static power consumption. The measurements were then analyzed to determine the optimal switch geometry and contact material combination for digital applications. With the data collected, a software model was developed for accurate simulation of higher complexity circuits composed of these switches. [2010-0351]
引用
收藏
页码:1032 / 1042
页数:11
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