Reactions of R4Sb2 (R = Me, Et) with (Me3SiCH2)3M (M = Ga, In) and crystal structures of [(Me3SiCH2)2InSbMe2]3 and [(Me3SiCH2)2GaOSbEt2]2

被引：0

作者：

Breunig, HJ ^{[1
]}

Stanciu, M ^{[1
]}

Rösler, R ^{[1
]}

Lork, E ^{[1
]}

机构：

[1] Univ Bremen, Inst Anorgan & Phys Chem, D-28334 Bremen, Germany

来源：

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE | 1998年 / 624卷 / 12期

关键词：

gallium; indium; antimony; x-ray diffraction;

D O I：

10.1002/(SICI)1521-3749(1998120)624:12<1965::AID-ZAAC1965>3.0.CO;2-R

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The reaction of (Me3SiCH2)(3)In with Me2SbSbMe2 gives [(Me3SiCH2)(2)InSbMe2](3) (1) and Me3SiCH2SbMe2. [(Me3SiCH2)(2)GaOSbEt2](2) (2) is formed by the reaction of (Me3SiCH2)(3)Ga with Et2SbSbEt2 and oxygen. The syntheses and the crystal structures of 1 and 2 are reported.

引用

页码：1965 / 1968

页数：4

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