Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100)

被引:22
|
作者
Hannappel, T
Visbeck, S
Zorn, M
Zettler, JT
Willig, F
机构
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
[2] Tech Univ Berlin, D-10623 Berlin, Germany
关键词
InP(100); RAS; MOCVD; UHV; surface; reconstruction;
D O I
10.1016/S0022-0248(00)00668-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Reflectance anisotropy (RA) spectra of InP(100) surfaces were taken either in the MOCVD environment or, after contamination-free transfer to ultra-high vacuum (UHV), in UHV down to 20 K. They were correlated with photoemission and Auger electron spectroscopy measurements to investigate the transition from the P-rich to the In-rich surface reconstruction. The strongest surface stoichiometry-induced changes were found in the RA-spectra at around 3 eV photon energy, i.e. in the range of the surface-modified bulk E-1 transition. At around 1.8 eV, the main peak of a pronounced surface transition was recorded with equal magnitude and sign for the P-rich and for the In-rich surface reconstruction. Two different specific RA-spectra measured with the highest peaks are postulated here to indicate the ordered P-rich and ordered In-rich surface reconstruction, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:124 / 128
页数:5
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