Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV

被引：0
|
作者：
Hannappel, T. [1 ]
Visbeck, S. [1 ]
Knorr, K. [1 ,2 ]
Mahrt, J. [1 ]
Zorn, M. [2 ]
Willig, F. [1 ]
机构：
[1] Hahn-Meitner-Institut, CD, Glienickerstrasse 100, 14109 Berlin, Germany
[2] Technische Universität Berlin, PN 6-1, Hardenbergstrasse 36, 10623 Berlin, Germany
来源：
Applied Physics A: Materials Science and Processing | 1999年 / 69卷 / 04期
关键词：
Auger electron spectroscopy - Epitaxial growth - Metallorganic chemical vapor deposition - Phosphorus - Semiconducting indium phosphide - Semiconductor growth;
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摘要：
For the first time direct contamination-free transfer to UHV was achieved for the P-rich InP(100) surface that is the easiest to prepare and control in the MOCVD environment. To avoid contamination during transfer a commercial MOCVD apparatus was modified to allow for transfer of samples to the 10-9 mbar UHV range within a very short time (less than 20 s). Epitaxial InP(100) films were prepared with TBP (tertiarybutylphosphine) and TMIn (trimethylindium) as precursors. In situ reflectance anisotropy spectroscopy (RAS) was carried out in the MOCVD environment. After transfer of the sample to UHV the same RAS spectrum was recovered. Auger-electron spectra (AES) confirmed the P-termination of the surface reconstructions suggested by RAS.
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页码：427 / 431
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