Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100)

被引:22
|
作者
Hannappel, T
Visbeck, S
Zorn, M
Zettler, JT
Willig, F
机构
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
[2] Tech Univ Berlin, D-10623 Berlin, Germany
关键词
InP(100); RAS; MOCVD; UHV; surface; reconstruction;
D O I
10.1016/S0022-0248(00)00668-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Reflectance anisotropy (RA) spectra of InP(100) surfaces were taken either in the MOCVD environment or, after contamination-free transfer to ultra-high vacuum (UHV), in UHV down to 20 K. They were correlated with photoemission and Auger electron spectroscopy measurements to investigate the transition from the P-rich to the In-rich surface reconstruction. The strongest surface stoichiometry-induced changes were found in the RA-spectra at around 3 eV photon energy, i.e. in the range of the surface-modified bulk E-1 transition. At around 1.8 eV, the main peak of a pronounced surface transition was recorded with equal magnitude and sign for the P-rich and for the In-rich surface reconstruction. Two different specific RA-spectra measured with the highest peaks are postulated here to indicate the ordered P-rich and ordered In-rich surface reconstruction, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:124 / 128
页数:5
相关论文
共 50 条
  • [31] APATITE SYNTHESIS FROM P-RICH ORGANIC-MATTER (ARN) AND CALCITE BY BACTERIAN ACTIVITY
    LUCAS, J
    PREVOT, L
    COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II, 1981, 292 (17): : 1203 - &
  • [32] Variation of the electronic and adsorption properties of GaAs(100) in the transition from an As-to Ga-rich surface
    G. V. Benemanskaya
    D. V. Daineka
    G. É. Frank-Kamenetskaya
    Physics of the Solid State, 2002, 44 : 989 - 993
  • [33] Variation of the electronic and adsorption properties of GaAs(100) in the transition from an As- to Ga-rich surface
    Benemanskaya, GV
    Daineka, DV
    Frank-Kamenetskaya, GÉ
    PHYSICS OF THE SOLID STATE, 2002, 44 (05) : 989 - 993
  • [34] REEs and U distribution in P-rich nodules from Gelasian Apulian Tethyan carbonate: A genetic record
    Mongelli, G.
    Sinisi, R.
    Paternoster, M.
    Perri, F.
    JOURNAL OF GEOCHEMICAL EXPLORATION, 2018, 194 : 19 - 28
  • [35] The magmatic-hydrothermal transition in P-rich pegmatitic melts: Crystal-melt-fluid interactions recorded by phosphate minerals
    Araujo, Fernando Prado
    Muchez, Philippe
    Hulsbosch, Niels
    GEOCHIMICA ET COSMOCHIMICA ACTA, 2023, 356 : 129 - 148
  • [36] Legionella-Containing Vacuoles Capture Ptdlns(4)P-Rich Vesicles Derived from the Golgi Apparatus
    Weber, Stephen A.
    Steiner, Bernhard
    Welin, Amanda
    Hilbi, Hubert
    MBIO, 2018, 9 (06):
  • [37] Reflectance anisotropy spectra of the diamond (100)-(2x1) surface: Evidence of strongly bound surface state excitons
    Palummo, M
    Pulci, O
    Del Sole, R
    Marini, A
    Schwitters, M
    Haines, SR
    Williams, KH
    Martin, DS
    Weightman, P
    Butler, JE
    PHYSICAL REVIEW LETTERS, 2005, 94 (08) : 1 - 4
  • [38] Synthesis of Black Phosphorene/P-Rich Transition Metal Phosphide NiP3 Heterostructure and Its Effect on the Stabilization of Black Phosphorene
    Bao, Tana
    Bolag, Altan
    Tian, Xiao
    Ojiyed, Tegus
    CRYSTALS, 2023, 13 (11)
  • [39] TRANSITION-METAL COMPLEXES OF P-RICH PHOSPHANES AND SILYLPHOSPHANES .9. CHROMIUM CARBONYL-COMPLEXES OF SILYLATED AND ALKYLATED TRIPHOSPHANES
    FRITZ, G
    BAUER, H
    ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1993, 619 (01): : 22 - 38
  • [40] SURFACE PHOTO-EMF SPECTRA OF P-INP(100) WITH COPPER SUBMONOLAYER COATING
    MUSATOV, AL
    GEIZER, SV
    FIZIKA TVERDOGO TELA, 1991, 33 (01): : 124 - 128