High growth rate epitaxy of thick 4H-SiC layers

被引：6

作者：

Syväjärvi, M ^{[1
]}

Yakimova, R

Jacobsson, H

Linnarsson, MK

Henry, A

Janzén, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

[2] Okmet AB, SE-17824 Ekero, Sweden

[3] Royal Inst Technol, Dept Solid State Elect, SE-16440 Stockholm, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

doping; epitaxy; purity; semi-insulating;

D O I：

10.4028/www.scientific.net/MSF.338-342.165

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sublimation epitaxy for fabrication of thick 4H-SiC layers has been studied with respect to surface morphology, structural quality, and purity. The surface morphology of thick (50-100 mum) epilayers is smooth, even though the growth rate was 100 mum/h. These surfaces are obtained within a parameter window for morphological stability. The structural perfection is confirmed by high-resolution X-Ray diffraction measurements and the epilayer quality is improved compared with the substrate. The limitation in purity is dependent mainly on the purity of the SiC source material. The growth system purity, mainly graphite and Ta parts of the growth crucible, is also of major importance. Results from intentional doping for high-resistive, semi-insulating and p-type material are presented.

引用

页码：165 / 168

页数：4

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