Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates

被引：0
|
作者：
Beshkova, M.
Grigorov, K. G.
Zakhariev, Z.
Abrashev, M.
Massi, M.
Yakimova, R.
机构：
[1] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Gen & Inorgan Chem, BU-1113 Sofia, Bulgaria
[3] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
[4] Technol Inst Aeronaut Plasmas & Proc Lab, BR-12228900 Sao Jose Dos Campos, Brazil
[5] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 01期
关键词：
AlN; sublimation epitaxy; HRXRD; RBS; SINGLE-CRYSTALS; BAND-GAP; BULK ALN; NITRIDE; AIN;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial layers of aluminium nitride were grown at temperature 2100 degrees C on 10X10 mm(2) 4H-SiC substrates via a sublimation-recondensation method in an RF heated graphite furnace. The source material was polycrystalline sintered AIN. Growths of AIN layers in vacuum and pure nitrogen at 20 mbar were compared. MA maximum growth rate of 70 mu m/h was achieved in a pure N-2 atmosphere. The surface morphology reveals the hexagonal symmetry of the seeds, suggesting an epitaxial growth. This was confirmed by High-Resolution X-Ray Diffraction. The spectra showed a strong and well defined (0002) reflection positioned at 36.04 degrees in a symmetric theta-2 theta scan for both samples. Micro-Raman spectroscopy revealed that the films had a wurtzite structure. Rutherford Backscattering Spectrometry indicated the quality with a relative chi(min) parameter 0.68.
引用
收藏
页码：213 / 216
页数：4
相关论文
共 50 条
  • [1] Deep levels in 4H-SiC layers grown by sublimation epitaxy
    Syväjärvi, M
    Yakimova, R
    Ciechonski, RR
    Kakanakova-Georgieva, A
    Storasta, L
    Janzén, E
    OPTICAL MATERIALS, 2003, 23 (1-2) : 61 - 64
  • [2] Sublimation epitaxy of AlN layers on 4H-SiC depending on the type of crucible
    M. Beshkova
    Z. Zakhariev
    J. Birch
    A. Kakanakova
    R. Yakimova
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 767 - 768
  • [3] 4H-SiC layers grown by liquid phase epitaxy on 4H-SiC off-axis substrates
    Kuznetsov, N
    Morozov, A
    Bauman, D
    Ivantsov, V
    Sukhoveev, V
    Nikitina, I
    Zubrilov, A
    Rendakova, S
    Dimitriev, VA
    Hofman, D
    Masri, P
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 229 - 232
  • [4] Polytype inclusions and triangular stacking faults in 4H-SiC layers grown by sublimation epitaxy
    Syväjärvi, M
    Yakimova, R
    Henry, A
    Janzén, E
    PHYSICA SCRIPTA, 1999, T79 : 64 - 66
  • [5] Polytype Inclusions and Triangular Stacking Faults in 4H-SiC Layers Grown by Sublimation Epitaxy
    Outokumpu Semitronic, Box 255, 17824 Ekerö, Sweden
    不详
    Phys Scr T, (64-66):
  • [6] Morphological features of sublimation-grown 4H-SiC layers
    Schulz, D
    Doerschel, J
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 95 - 98
  • [7] Liquid Phase Epitaxy of 4H-SiC Layers on on-axis PVT Grown Substrates
    Kusunoki, Kazuhiko
    Kamei, Kazuhito
    Yashiro, Nobuyoshi
    Hattori, Ryo
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 137 - 140
  • [8] Sublimation epitaxy of AIN layers on 4H-SiC depending on the type of crucible
    Beshkova, M
    Zakhariev, Z
    Birch, J
    Kakanakova, A
    Yakimova, R
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) : 767 - 768
  • [9] Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy
    Grivickas, P
    Galeckas, A
    Linnros, J
    Syväjärvi, M
    Yakimova, R
    Grivickas, V
    Tellefsen, JA
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (1-3) : 191 - 194
  • [10] Properties of AlN layers grown by sublimation epitaxy
    Beshkova, M
    Zakhariev, Z
    Birch, J
    Kakanakova, A
    Yakimova, R
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 995 - 998
12345