Sublimation epitaxy of AlN layers grown by different conditions on 4H-SiC substrates

被引：0

作者：

Beshkova, M.

Grigorov, K. G.

Zakhariev, Z.

Abrashev, M.

Massi, M.

Yakimova, R.

机构：

[1] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria

[2] Bulgarian Acad Sci, Inst Gen & Inorgan Chem, BU-1113 Sofia, Bulgaria

[3] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria

[4] Technol Inst Aeronaut Plasmas & Proc Lab, BR-12228900 Sao Jose Dos Campos, Brazil

[5] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 01期

关键词：

AlN; sublimation epitaxy; HRXRD; RBS; SINGLE-CRYSTALS; BAND-GAP; BULK ALN; NITRIDE; AIN;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial layers of aluminium nitride were grown at temperature 2100 degrees C on 10X10 mm(2) 4H-SiC substrates via a sublimation-recondensation method in an RF heated graphite furnace. The source material was polycrystalline sintered AIN. Growths of AIN layers in vacuum and pure nitrogen at 20 mbar were compared. MA maximum growth rate of 70 mu m/h was achieved in a pure N-2 atmosphere. The surface morphology reveals the hexagonal symmetry of the seeds, suggesting an epitaxial growth. This was confirmed by High-Resolution X-Ray Diffraction. The spectra showed a strong and well defined (0002) reflection positioned at 36.04 degrees in a symmetric theta-2 theta scan for both samples. Micro-Raman spectroscopy revealed that the films had a wurtzite structure. Rutherford Backscattering Spectrometry indicated the quality with a relative chi(min) parameter 0.68.

引用

页码：213 / 216

页数：4

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