Epitaxial growth of γ-In2Se3 films by molecular beam epitaxy

被引：22

作者：

Ohtsuka, T

Nakanishi, K

Okamoto, T

Yamada, A

Konagai, M

Jahn, U

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 2A期

关键词：

III-VI compound semiconductor; molecular beam epitaxy; defect wurtzite structure; vacancy ordering; cathodoluminescence;

D O I：

10.1143/JJAP.40.509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of gamma -In2Se3 film was investigated by molecular beam epitaxy (MBE), gamma -In2Se3 epiataxial films with a defect wurtzite structure were successfully grown on GaAs(111)B substrates for the first time. The crystal structure of the gamma -In2Se3 epitaxial film was determined by X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that gamma -In2Se3 epitaxial films exhibit a vacancy-ordered crystal structure and that sharrow hexagonal cone structures were formed on the film surface. Furthermore, optical properties of the gamma -In2Se3 epitaxial films were investigated by spatially resolved cathodoluminescence (CL).

引用

页码：509 / 512

页数：4

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