Epitaxial growth of γ-In2Se3 films by molecular beam epitaxy

被引：22
|
作者：
Ohtsuka, T
Nakanishi, K
Okamoto, T
Yamada, A
Konagai, M
Jahn, U
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan
[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 2A期
关键词：
III-VI compound semiconductor; molecular beam epitaxy; defect wurtzite structure; vacancy ordering; cathodoluminescence;
D O I：
10.1143/JJAP.40.509
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial growth of gamma -In2Se3 film was investigated by molecular beam epitaxy (MBE), gamma -In2Se3 epiataxial films with a defect wurtzite structure were successfully grown on GaAs(111)B substrates for the first time. The crystal structure of the gamma -In2Se3 epitaxial film was determined by X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that gamma -In2Se3 epitaxial films exhibit a vacancy-ordered crystal structure and that sharrow hexagonal cone structures were formed on the film surface. Furthermore, optical properties of the gamma -In2Se3 epitaxial films were investigated by spatially resolved cathodoluminescence (CL).
引用
收藏
页码：509 / 512
页数：4
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