Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition

被引：0
|
作者：
Villagonzalo, C [1 ]
Römer, RA [1 ]
Schreiber, M [1 ]
MacKinnon, A [1 ]
机构：
[1] Tech Univ, Inst Phys, D-09107 Chemnitz, Germany
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity a obtained experimentally, we extend our linear-response-based transport calculations in the three-dimensional Anderson model of localization. Taking a dynamical scaling exponent z in agreement with predictions from scaling theories, we show that the temperature-dependent sigma, the thermoelectric power S, the thermal conductivity K and the Lorenz number L-0 obey scaling.
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页码：166 / 167
页数：2
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