Magnetic and transport properties of amorphous Tb-Si alloys near the metal-insulator transition

被引:9
|
作者
Liu, M [1 ]
Hellman, F [1 ]
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92037 USA
来源
PHYSICAL REVIEW B | 2003年 / 67卷 / 05期
关键词
D O I
10.1103/PhysRevB.67.054401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetic and transport properties of amorphous TbxSi1-x alloys for x near the metal-insulator transition (approximate to0.14) have been studied as a function of temperature, magnetic field, and composition. Local Tb magnetic moments act to localize extended-state carriers at low temperatures, similarly to Gd, causing a sharp drop in conductivity as a function of temperature. The spin-glass freezing seen in amorphous Gd-Si alloys is drastically affected by the randomly oriented local anisotropy of Tb; amorphous Tb-Si alloys show a broad poorly defined susceptibility peak and a strong frequency dependence which is not seen in amorphous Gd-Si alloys. The magnetic exchange interactions are strong but balanced ferromagnetic and antiferromagnetic, as in amorphous Gd-Si alloys, with little dependence on x and no effect of the metal-insulator transition. The Tb effective moment in the paramagnetic state shows similar effects to Gd: a peak at the metal-insulator transition due to polarization of carriers and suppression below the expected value far from it.
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页数:6
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