Critical behavior of the thermoelectric transport properties in amorphous systems near the metal-insulator transition

被引：0

作者：

Villagonzalo, C ^{[1
]}

Römer, RA ^{[1
]}

Schreiber, M ^{[1
]}

MacKinnon, A ^{[1
]}

机构：

[1] Tech Univ, Inst Phys, D-09107 Chemnitz, Germany

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity a obtained experimentally, we extend our linear-response-based transport calculations in the three-dimensional Anderson model of localization. Taking a dynamical scaling exponent z in agreement with predictions from scaling theories, we show that the temperature-dependent sigma, the thermoelectric power S, the thermal conductivity K and the Lorenz number L-0 obey scaling.

引用

页码：166 / 167

页数：2

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