Via-in-pixel design of truly 2D extendable photodiode detector for medical CT imaging

被引:5
|
作者
Ji, Fan [1 ]
Kalliopuska, Juha [2 ]
Eranen, Simo [2 ]
Juntunen, Mikko [1 ]
Hietanen, Iiro [1 ]
Leppavouri, Seppo [3 ]
机构
[1] Detect Technol Inc, Vantaa, Finland
[2] Tech Res Ctr Finland, FIN-02150 Espoo, Finland
[3] Univ Oulu, Microelect & Mat Phys Labs, Oulu, Finland
关键词
via-in-pixel design; computed tomography; photodiode detector; through wafer interconnection;
D O I
10.1016/j.sna.2007.10.044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a new design of the silicon-based photodiode detector for medical imaging, especially for the X-ray computed tomography applications. The new structure of the photodiode includes a conventional front-illuminated photodiode and a through wafer interconnection. Moreover, the through wafer interconnection is integrated into the photodiode by being placed inside the active area of the photodiode. This new structure is called via-in-pixel design. Truly 2D photodiode detector can be designed with maximum free space or minimum gap between each two photodiode elements by using the via-in-pixel design. In addition, 2D photodiode detector arrays can be constructed by tiling more edgeless detectors. In the paper, the via-in-pixel photodiodes were demonstrated and the performances were measured. Together with the measurement data, a quasi-3D device simulation was performed to disclose the electrical characteristics of the via-in-pixel photodiode by using Synopsis Advanced TCAD software. The results show that the via-in-pixel design of the photodiode detector can either meet or exceed the medical imaging requirements. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:59 / 65
页数:7
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