Integrated photoreceivers with MSM and PIN photodetectors for high frequency applications

被引：0

作者：

Tlaczala, M ^{[1
]}

机构：

[1] Wroclaw Tech Univ, Inst Microsyst Technol, PL-50372 Wroclaw, Poland

来源：

INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 2001年 / 4413卷

关键词：

MSM; PIN; InGaAs photodetectors; MMIC;

D O I：

10.1117/12.425459

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The results of investigation of PIN and MSM photodetectors fabricated in our Semiconductor Device Laboratory are presented Discrete chips of PIN and MSM photodetectors and similar photodetectors integrated with a MESFET amplifier within a single MMIC chip were tested and compared. The structures were designed for range of wavelengths from 870nm to 1000nm. To accomplish this, the InxGa1-xAs absorption layer with appropriate content of indium has been used as an active layer. All structures have been fabricated using Metal Organic Vapour Phase Epitaxy (MOVPE) growth on GaAs substrates with the use of different buffer and matching lays configuration. I-V and spectral characteristics of the PIN and MSM photodetectors and also MMIC structures with the MSM photodetector were evaluated Time response to the optical pulse excitation has been measured. All designs were compared from the point of view of their application in the optoelectronic integrated circuits.

引用

页码：375 / 380

页数：6

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