Integrated photoreceivers with MSM and PIN photodetectors for high frequency applications

The results of investigation of PIN and MSM photodetectors fabricated in our Semiconductor Device Laboratory are presented Discrete chips of PIN and MSM photodetectors and similar photodetectors integrated with a MESFET amplifier within a single MMIC chip were tested and compared. The structures were designed for range of wavelengths from 870nm to 1000nm. To accomplish this, the InxGa1-xAs absorption layer with appropriate content of indium has been used as an active layer. All structures have been fabricated using Metal Organic Vapour Phase Epitaxy (MOVPE) growth on GaAs substrates with the use of different buffer and matching lays configuration. I-V and spectral characteristics of the PIN and MSM photodetectors and also MMIC structures with the MSM photodetector were evaluated Time response to the optical pulse excitation has been measured. All designs were compared from the point of view of their application in the optoelectronic integrated circuits.