Effects of hydrogen annealing on the electrical properties of SrBi2Nb2O9 thin films

We have investigated the effects of hydrogen annealing at the Curie temperature (435 degreesC) on Pt/SrBi2Nb2O9(SBN)/Si (MFS) and Pt/SBN/Pt (MFM) structures. Although the Curie temperature is too low to cause any phase transformation in the SBN film, the microstructure and the electrical characteristics of the MFS and the MFM structures are obviously damaged by the effects of hydrogen annealing. However, the interface trap density is relatively decreased from 3.3 x 10(11) to 1.58 X 10(11)/cm(2) eV after hydrogen annealing at 435 degreesC. After a recovery annealing process at a higher temperature in an oxygen ambient, the microstructure and the electrical properties of the MFM and the MFS structures are completely recovered.