Electronic and structual properties of ferroelectric SrBi2Ta2O9, SrBi2Nb2O9 and PbBi2Nb2O9

被引：0
|
作者：
Miura, K [1 ]
机构：
[1] Sony Corp, Mat Labs, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
FeRAM; SrBi2Ta2O9; SrBi2Nb2O9; PbBi2Nb2O9;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Electronic properties of ferroelectric SrBi2Ta2O9 (SBT), SrBi2Nb2O9 (SBN) and PbBi2Nb2O9 (PBN) have been investigated using a first-principles calculational method with optimized structures. In optimized SBT, the displacement of Ta in TaO6 octahedra is small, while the displacement of Nb in NbO6 octahedra is larger in optimized SBN. In optimized PBN, on the other hand, due to the the hybridization between Pb 6s and 0 2p, the displacement of NbO6 octahedra is larger than that in SBN.
引用
收藏
页码：S1244 / S1247
页数：4
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