Electronic and structual properties of ferroelectric SrBi2Ta2O9, SrBi2Nb2O9 and PbBi2Nb2O9

被引：0
|
作者：
Miura, K [1 ]
机构：
[1] Sony Corp, Mat Labs, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
FeRAM; SrBi2Ta2O9; SrBi2Nb2O9; PbBi2Nb2O9;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Electronic properties of ferroelectric SrBi2Ta2O9 (SBT), SrBi2Nb2O9 (SBN) and PbBi2Nb2O9 (PBN) have been investigated using a first-principles calculational method with optimized structures. In optimized SBT, the displacement of Ta in TaO6 octahedra is small, while the displacement of Nb in NbO6 octahedra is larger in optimized SBN. In optimized PBN, on the other hand, due to the the hybridization between Pb 6s and 0 2p, the displacement of NbO6 octahedra is larger than that in SBN.
引用
收藏
页码：S1244 / S1247
页数：4
相关论文
共 50 条
  • [21] Piezoelectric and ferroelectric properties of the modified SrBi2Nb2O9 ceramics
    Ando, A
    Kimura, M
    Sawada, T
    Hayashi, K
    Sakabe, Y
    FERROELECTRICS, 2002, 268 : 65 - 70
  • [22] Enhanced ferroelectric properties of multilayer SrBi2Ta2O9/SrBi2 Nb2O9 thin films for NVRAM applications
    Ortega, N.
    Bhattacharya, P.
    Katiyar, R. S.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 130 (1-3): : 36 - 40
  • [23] MOCVD of Nb substituted SrBi2Ta2O9 for integrated ferroelectric capacitors
    Hendrix, BC
    Glassman, TE
    Roeder, JF
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 143 - 148
  • [24] Electronic band structure of ferroelectric SrBi2Ta2O9
    Zhang, J
    Yin, Z
    Zhang, MS
    APPLIED PHYSICS LETTERS, 2002, 81 (25) : 4778 - 4780
  • [25] Cation disorder in ferroelectric PbBi2Nb2O9
    Srikanth, V
    Idink, H
    White, WB
    Subbarao, EC
    Rajagopal, H
    Sequeira, A
    ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1996, 52 : 432 - 439
  • [26] Piezoelectric properties in textured ceramics of SrBi2Nb2O9
    Sawada, Takuya
    Ogawa, Hirozumi
    Kimura, Masahiko
    Shiratsuyu, Kosuke
    Ando, Akira
    ELECTROCERAMICS IN JAPAN IX, 2006, 320 : 15 - 18
  • [27] Ferroelectric properties in Ca substituted SrBi2Nb2O9 thin films
    Das, RR
    Pérez, W
    Bhattacharya, P
    Katiyar, RS
    FERROELECTRIC THIN FILMS XI, 2003, 748 : 141 - 146
  • [28] Ionic Doping Effects in SrBi2Nb2O9 Ferroelectric Ceramics
    S. E. Park
    J. A. Cho
    T. K. Song
    M. H. Kim
    S. S. Kim
    H. -S. Lee
    Journal of Electroceramics, 2004, 13 : 51 - 54
  • [29] Calculation of electrocaloric properties of ferroelectric SrBi2Ta2O9
    Hamad, Mahmoud Aly
    PHASE TRANSITIONS, 2012, 85 (1-2) : 159 - 168
  • [30] Piezoelectric properties of SrBi2Nb2O9 textured ceramics
    Ogawa, H
    Sawada, T
    Kimura, M
    Shiratsuyu, K
    Wada, N
    Ando, A
    Tamura, H
    Sakabe, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9B): : 7050 - 7054
12345