A novel P-channel nitride-trapping nonvolatile memory device with excellent reliability properties

被引：3
|
作者：
Lue, HT [1 ]
Hsieh, KY [1 ]
Liu, R [1 ]
Lu, CY [1 ]
机构：
[1] Macronix Int Co Ltd, Emerging Cent Lab, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 08期
关键词：
band-to-band tunneling induced hot-electron (BTBTHE); NROM; nitride trapping; P-channel; SONOS;
D O I：
10.1109/LED.2005.852742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel P-channel nitride trapping nonvolatile memory device is studied. The device uses a P+-poly gate to reduce gate injection during channel erase, and a relatively thick tunnel oxide (> 5 nm) to prevent charge loss. The programming is carried out by low-power band-to-band tunneling induced hot-electron (BTBTHE) injection. For the erase, self-convergent channel erase is used to expel the electrons out of nitride. Experimental results show that this p-channel device is immune to read disturb due to the large potential barrier for hole tunneling. Excellent P/E cycling endurance and retention properties are demonstrated. This p-channel device shows potential for high-density NAND-type array application with high-programming throughput (> 10 Mb/sec).
引用
收藏
页码：583 / 585
页数：3
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