Characterization of charging damage in high power implants using SPIDER wafers

被引:0
|
作者
Singh, B [1 ]
Elkind, A [1 ]
Mack, M [1 ]
Ameen, M [1 ]
Marshall, D [1 ]
Ring, P [1 ]
Krull, W [1 ]
机构
[1] Motorola MOS12, Chandler, AZ USA
来源
2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A detailed investigation of charging induced damage due to high power implants was done using SEMATECH SPIDER wafers with sub-50 Angstrom gate oxide thickness. The SPIDER wafers have an active area to gate antenna ratio of up to 1:90K, which enables a high sensitivity for charging related damage. Threshold voltage (V-t) and gate leakage current (I-g) shifts for both n- and p-type devices have been examined as a response to plasma electron flood (PEF) conditions. Results from 180 keV As+ and P+ implants at 20 mA and 5 x 10(15)/cm(2) dose are presented. The impact of PEF settings on n-mos and p-mos devices is shown, and correlated to both in situ charge monitors and CHARM (TM) wafers. This work underscores the importance of characterizing PEF operation to obtain optimum charge control.
引用
收藏
页码:561 / 564
页数:4
相关论文
共 50 条
  • [31] The Role of Batteries in High Power Charging Infrastructure
    Jahn, Karin
    Klinck, Carl-Friedrich
    PROCEEDINGS OF THE 14TH INTERNATIONAL RENEWABLE ENERGY STORAGE CONFERENCE 2020 (IRES 2020), 2021, 6 : 127 - 134
  • [32] X-ray characterization technique for the assessment of surface damage in GaN wafers
    Letts, Edward
    Sun, Yimeng
    Key, Daryl
    Jordan, Benjamin
    Hashimoto, Tadao
    JOURNAL OF CRYSTAL GROWTH, 2018, 501 : 13 - 17
  • [33] CHARACTERIZATION OF STRESS IN SEMICONDUCTOR WAFERS USING BIREFRINGENCE MEASUREMENTS
    GAMARTS, EM
    DOBROMYSLOV, PA
    KRYLOV, VA
    PRISENKO, SV
    JAKUSHENKO, EA
    SAFAROV, VI
    JOURNAL DE PHYSIQUE III, 1993, 3 (05): : 1033 - 1049
  • [34] NONDESTRUCTIVE CHARACTERIZATION OF SOI WAFERS USING SPECTROSCOPIC REFLECTOMETRY
    SMEYS, P
    MAGNUSSON, U
    COLINGE, JP
    SOLID-STATE ELECTRONICS, 1993, 36 (08) : 1213 - 1216
  • [35] The future is Megawatt Charging: A high power revolution on charging infrastructure for commercial vehicles
    Liehr C.
    VDI Berichte, 2023, 2023 (2417): : 25 - 34
  • [36] Nondestructive Defect Characterization of Saw-Damage-Etched Multicrystalline Silicon Wafers Using Scanning Electron Acoustic Microscopy
    Meng, Lei
    Rao, Satyavolu S. Papa
    Bhatia, Charanjit S.
    Steen, Steven E.
    Street, Alan G.
    Phang, Jacob C. H.
    IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (01): : 370 - 374
  • [37] Nondestructive Defect Characterization of Saw-Damage-Etched Multicrystalline Silicon Wafers Using Scanning Electron Acoustic Microscopy
    Meng, Lei
    Rao, Satyavolu S. Papa
    Bhatia, Charanjit S.
    Steen, Steven E.
    Street, Alan G.
    Phang, Jacob C. H.
    2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2, 2013,
  • [38] High Power Laser Characterization Using Beam Diagnostics
    Blecher, J. J.
    Palmer, T. A.
    Kelly, S. M.
    TRENDS IN WELDING RESEARCH: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE, 2013, : 55 - 59
  • [39] Design and Modelling of SRC Based Capacitor Charging Power Supply for High Power Klystron Modulator Using MULTISIM
    Parate, Bhushan
    Kumar, R. Sandeep
    Thakur, Kiran
    Sreeraj, E. S.
    Krishnan, R.
    2019 NATIONAL POWER ELECTRONICS CONFERENCE (NPEC), 2019,
  • [40] High-power and High Repetitive Rate Charging Techniques of Laser Power Supply
    Gao Yinghui
    Liu Kun
    Fu Rongyao
    Sun Yao-hong
    Pin Yan
    PROCEEDINGS OF THE 2016 IEEE 11TH CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA), 2016, : 1189 - 1194