Optical lithography solutions for sub-65 nm semiconductor devices.

被引：12

作者：

Mulkens, J ^{[1
]}

McClay, J ^{[1
]}

Tirri, B ^{[1
]}

Brunotte, M ^{[1
]}

Mecking, B ^{[1
]}

Jasper, H ^{[1
]}

机构：

[1] ASML, NL-5503 LA Veldhoven, Netherlands

来源：

OPTICAL MICROLITHOGRAPHY XVI, PTS 1-3 | 2003年 / 5040卷

关键词：

157; nm; lithography; exposure system; CaF; purging; hard pellicle;

D O I：

10.1117/12.485382

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we present a status update of the exposure tool developments for sub 65 nm CD's. Main development path is 157-nm lithography. ASML follows a two step approach volume will be presented. Step 1 is based on the Micrascan step and scans platform and step 2 is based on the TWINSCAN platform. The progress of the development and first results on prototypes are discussed. This includes optics, purging, and pellicle status. The impact of CaF2 birefringence (intrinsic and stress induced) on lens performance is evaluated. Experimental data on optical path purging is presented. The pellicle status is reviewed, and results of hard pellicle testing in KrF scanners are presented. For the Micrascan system, first imaging and overlay results are presented.

引用

页码：753 / 762

页数：10

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