Anomalous Hall effect superimposed in polycrystalline SrRuO3 thick film

被引:5
|
作者
Tian, Yingyi
Wang, Shuanhu [1 ]
Wei, Xiangyang
Yang, Ruishu
Jin, Kexin [1 ]
机构
[1] Northwestern Polytech Univ, Shaanxi Key Lab Condensed Matter Struct & Properti, Xi'an 710072, Peoples R China
关键词
BERRY PHASE; MAGNETOTRANSPORT;
D O I
10.1063/5.0085391
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electric, magnetic, and thermal properties of transition metal oxide films can be modulated by introducing polycrystalline at the macroscopic grain boundaries. Based on these points, in this work, we studied the two-channel anomalous Hall effect (AHE) in polycrystalline ferromagnetic SrRuO3 (SRO) films. The magnetic regions with different crystal directions have different coercivities, resulting in two opposite AHE channels in the polycrystalline SRO layer. However, single-crystal SRO films prepared under the same conditions are found to exhibit only one AHE. The superposition of the two AHE leads to the hump-like behavior of the Hall resistance loop, which is caused by the change of crystalline. This observation provides a new way to explain the hump-like feature of SRO.& nbsp;Published under an exclusive license by AIP Publishing
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3 Multilayers
    Yao, Xiaokang
    Wang, Can
    Guo, Er-Jia
    Wang, Xinyan
    Li, Xiaomei
    Liao, Lei
    Zhou, Yong
    Lin, Shan
    Jin, Qiao
    Ge, Chen
    He, Meng
    Bai, Xuedong
    Gao, Peng
    Yang, Guozhen
    Jin, Kui-Juan
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (04) : 6194 - 6202
  • [42] Theoretical investigation of Hall sign change in SrRuO3
    Sun, Shih-Jye
    Chou, Hsiung
    Lin, Ssu-Ting
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2019, 31 (27)
  • [43] Inhomogeneous ferromagnetism mimics signatures of the topological Hall effect in SrRuO3 films
    Kim, Gideok
    Son, K.
    Suyolcu, Y. E.
    Miao, L.
    Schreiber, N. J.
    Nair, H. P.
    Putzky, D.
    Minola, M.
    Christiani, G.
    van Aken, P. A.
    Shen, K. M.
    Schlom, D. G.
    Logvenov, G.
    Keimer, B.
    PHYSICAL REVIEW MATERIALS, 2020, 4 (10)
  • [44] Low-temperature anisotropic magnetoresistance and planar Hall effect in SrRuO3
    Haham, Noam
    Shperber, Yishai
    Reiner, James W.
    Klein, Lior
    PHYSICAL REVIEW B, 2013, 87 (14):
  • [45] Hump-like structure in Hall signal from ultra-thin SrRuO3 films without inhomogeneous anomalous Hall effect
    Sohn, Byungmin
    Kim, Bongju
    Choi, Jun Woo
    Chang, Seo Hyoung
    Han, Jung Hoon
    Kim, Changyoung
    CURRENT APPLIED PHYSICS, 2020, 20 (01) : 186 - 190
  • [46] Correlation of preparation conditions of SrRuO3 ultrathin films with topological Hall effect
    Zhang, Jing-Xian
    Bao, Ming-Rui
    Ye, Fei
    Liu, Jia
    Cheng, Long
    Zhai, Xiao-Fang
    ACTA PHYSICA SINICA, 2023, 72 (09)
  • [47] Feasibility Study of SrRuO3/SrTiO3/SrRuO3 Thin Film Capacitors in DRAM Applications
    Popescu, Dan
    Popescu, Bogan
    Jegert, Gunther
    Schmelzer, Sebastian
    Boettger, Ulrich
    Lugli, Paolo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (06) : 2130 - 2135
  • [48] Properties of polycrystalline SrRuO3 thin films on Si substrates
    Sony Corp Atsugi Technology Cent, Kanagawa-ken, Japan
    Mater Res Bull, 1 (83-96):
  • [49] Properties of polycrystalline SrRuO3 thin films on Si substrates
    Watanabe, K
    Ami, M
    Tanaka, M
    MATERIALS RESEARCH BULLETIN, 1997, 32 (01) : 83 - 96
  • [50] Longitudinal and transverse Hall resistivity of epitaxial SrRuO3 films
    Yang, H.C.
    Liu, S.H.
    Wang, L.M.
    Horng, H.E.
    Journal of Applied Physics, 1999, 85 (8 pt 2B):